Dimos K, Koutselas I B, Karakassides M A
Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Greece.
J Phys Chem B. 2006 Nov 16;110(45):22339-45. doi: 10.1021/jp064275y.
ZnS semiconductor quantum dots have been synthesized using a method involving melt exchange reaction inside the pores of MCM-41 and subsequent reaction with H(2)S. The ZnS quantum dots-MCM-41 composite, which has been studied with XRD, EDS, and BET techniques, is shown to have retained within the pores the formed quantum dots, with a size distribution exhibiting a maximum nanoparticle diameter of ca. 1.8 nm. The structure and the sorption properties of the ZnS/MCM-41 composite have been studied by means of X-ray diffraction, Fourier transform infrared spectroscopy, and surface area measurements. All experimental data reveal that all the final composite products, containing up to 9.3 wt % ZnS as verified by EDS analysis, keep the basic structural characteristics of MCM-41 materials, without significant reduction of their active surface areas. The quantum dot optical properties have been studied with UV-vis, photoluminescence, and photoluminescence excitation spectroscopies providing evidence for the low-dimensional character of the ZnS semiconductor particles.
采用一种涉及在MCM - 41孔内进行熔体交换反应并随后与H₂S反应的方法合成了ZnS半导体量子点。通过XRD、EDS和BET技术对ZnS量子点 - MCM - 41复合材料进行了研究，结果表明在孔内保留了形成的量子点，其尺寸分布显示最大纳米颗粒直径约为1.8 nm。通过X射线衍射、傅里叶变换红外光谱和表面积测量研究了ZnS/MCM - 41复合材料的结构和吸附性能。所有实验数据表明，经EDS分析验证，所有最终复合材料产品中ZnS含量高达9.3 wt%，保留了MCM - 41材料的基本结构特征，其活性表面积没有显著降低。利用紫外可见光谱、光致发光光谱和光致发光激发光谱研究了量子点的光学性质，为ZnS半导体颗粒的低维特性提供了证据。
