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一种带有嵌入微球的低熔点合金背衬的宽带硅基聚偏二氟乙烯超声换能器阵列。

A wideband PVDF-on-silicon ultrasonic transducer array with microspheres embedded low melting temperature alloy backing.

作者信息

Kim Hyun-Joong, Lee Hanwoo, Ziaie Babak

机构信息

School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, 1205 W. State St., West Lafayette, IN 47907, USA.

出版信息

Biomed Microdevices. 2007 Feb;9(1):83-90. doi: 10.1007/s10544-006-9014-6.

Abstract

A PVDF-based 8-element ultrasound transducer array (1 mm x 1 mm element size with an inter-element spacing of 1 mm) on a silicon carrier substrate is fabricated and characterized. To improve the performance of the transducer, new CMOS-compatible fabrication technologies are introduced. These include: (1) adhesive micro-contact printing on non-radiating areas, and (2) glass microspheres (7-20 microm in diameter) embedded low melting temperature alloy (LMA) for backside electrical connection. The first improvement removes the adverse effects of adhesive layer (e.g., lower sensitivity) between the PVDF and backside contact while the second one improves the pulse-echo signal quality by eliminating reflections at the backing/water interface. The fabricated array elements are tested in a water tank and their pulse-echo response are recorded. The central frequency of each element is 25 MHz with a 100% measured 6-dB bandwidth (60% 3-dB bandwidth).

摘要

在硅载体衬底上制造并表征了一种基于聚偏二氟乙烯(PVDF)的8元超声换能器阵列(元件尺寸为1毫米×1毫米,元件间距为1毫米)。为了提高换能器的性能,引入了新的与互补金属氧化物半导体(CMOS)兼容的制造技术。这些技术包括:(1)在非辐射区域进行粘性微接触印刷,以及(2)嵌入低熔点合金(LMA)的玻璃微球(直径7 - 20微米)用于背面电连接。第一项改进消除了PVDF与背面接触之间粘合剂层的不利影响(例如,灵敏度降低),而第二项改进通过消除背衬/水界面处的反射来提高脉冲回波信号质量。在水箱中对制造的阵列元件进行测试,并记录它们的脉冲回波响应。每个元件的中心频率为25兆赫兹,测量的6分贝带宽为100%(3分贝带宽为60%)。

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