剖析电压传感器与孔道结构域之间的偶联。
Dissecting the coupling between the voltage sensor and pore domains.
作者信息
Roux Benoit
机构信息
Institute for Molecular Pediatric Sciences and Department of Biochemistry and Molecular Biology, University of Chicago, Gordon Center for Integrative Sciences, 929 East 57th Street, Chicago, Ilinois 60637, USA.
出版信息
Neuron. 2006 Nov 22;52(4):568-9. doi: 10.1016/j.neuron.2006.11.002.
The gating mechanism of K(v) channels is not known. In this issue of Neuron, Soler-Llavina et al. present fascinating results that support the concept of relatively independent voltage-sensing modules. However, they also find that its interactions with the pore domain are rather complex, with specific S4-S5 intersubunit contacts underlying the concerted transition leading to the channel opening.
K（v）通道的门控机制尚不清楚。在本期《神经元》杂志中，索勒 - 拉维纳等人展示了引人入胜的结果，这些结果支持相对独立的电压感应模块的概念。然而，他们还发现其与孔道结构域的相互作用相当复杂，特定的S4 - S5亚基间接触是导致通道开放的协同转变的基础。
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