Luo Shudong, Zhou Weiya, Zhang Zengxing, Liu Lifeng, Dou Xinyuan, Wang Jianxiong, Zhao Xiaowei, Liu Dongfang, Gao Yan, Song Li, Xiang Yanjuan, Zhou Jianjun, Xie Sishen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, PR China.
Small. 2005 Oct;1(10):1004-9. doi: 10.1002/smll.200500053.
Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In(2)O(3)) powders in an ammonia (NH(3)) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In(2)O(3) starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 microm in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In(2)O(3) powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.
通过在氨（NH₃）气流中原位氮化氧化铟（In₂O₃）粉末，合成了大量的氮化铟（InN）纳米线。一批可获得数十毫克的纳米线。在优化条件下，每100毫克的In₂O₃起始粉末最多可生产65毫克的InN纳米线。合成的纳米线沿[001]方向生长，结晶度极佳。它们纯度高，长度为30 - 50微米，直径几乎均匀，约为100纳米。纳米线的光致发光测量在707纳米处呈现出一个强峰。基于吸收光谱估计光学带隙约为1.7电子伏特。实验结果还表明，原位氮化In₂O₃粉末的方法对于大量合成高纯度InN纳米线是可行的，具有良好的可重复性且无需催化剂材料。大量合成InN纳米线将有助于进一步研究和理解其固有特性，并且有利于它们在纳米器件中的潜在应用。
