Chang Mu-Tung, Chou Li-Jen, Chueh Yu-Lun, Lee Yu-Chen, Hsieh Chin-Hua, Chen Chii-Dong, Lan Yann-Wen, Chen Lih-Juann
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
Small. 2007 Apr;3(4):658-64. doi: 10.1002/smll.200600562.
Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 nm. The highest aspect ratio was estimated to be about 200. An emission peak at 470 nm was found by photoluminescence measurement at room temperature. The suggested growth mechanism of the nanowires is vapor-solid growth, in which gaseous ammonia plays a significant role to reduce the formation temperature. The approach has proved to be a reliable way to produce nitrogen-doped WO(3) nanowires on Si in large quantities. The direct fabrication of WO(3)-based nanodevices on Si has been demonstrated.
在低温条件下，成功地在4英寸硅（100）晶片上合成了非常致密且分布均匀的氮掺杂氧化钨（WO(3)）纳米线。这些纳米线长度可达5微米，直径在25至35纳米之间。估计其最高纵横比约为200。通过室温下的光致发光测量发现了一个位于470纳米处的发射峰。所提出的纳米线生长机制为气-固生长，其中气态氨在降低形成温度方面起着重要作用。该方法已被证明是在硅上大量生产氮掺杂WO(3)纳米线的可靠途径。已展示了在硅上直接制造基于WO(3)的纳米器件。
