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不同温度下铝阳极氧化形成的自组织纳米孔阵列中的缺陷分析

Defects analysis in self-organized nanopore arrays formed by anodization of aluminium at various temperatures.

作者信息

Sulka Grzegorz D, Jaskuła Marian

机构信息

Faculty of Chemistry, Department of Physical Chemistry and Electrochemistry, Jagiellonian University, Ingardena 3, 30060 Krakow, Poland.

出版信息

J Nanosci Nanotechnol. 2006 Dec;6(12):3803-11. doi: 10.1166/jnn.2006.617.

DOI:10.1166/jnn.2006.617
PMID:17256334
Abstract

The self-organized anodization of aluminium in sulphuric acid was employed for formation of high-density nanostructures at various cell potentials and temperatures. The well-ordered arrangement of nanopores was obtained by two-step anodization process. The qualitative and quantitative analyses of defects were performed from SEM images of nanostructures. The Fourier transform (FFT) analyses showed that the uniformity of the triangular lattice increases gradually with increasing anodising potential independently of temperature. The order in the nanopore arrangement and size of well-ordered domains increase with increasing anodising potential for all studied temperatures. Quantitative analyses of defects, known as Delanuay triangulations, were performed for various anodising potentials and temperatures. The percentage of generated defects is constant at the cell potential between 15 and 23 V. At the temperature of 1 degree C, the percentage of defects equals to 20% while at temperatures of -8 or 10 degrees C reaches a value of about 30%. At the anodising potential of 25 V the percentage of generated defects in porous alumina is drastically reduced to about 10%, independently of the anodising temperature. The perfect nanopore arrangement on the anodised surface with the smallest number of defects can be obtained at 25 V.

摘要

采用铝在硫酸中的自组织阳极氧化法,在不同的槽电压和温度下形成高密度纳米结构。通过两步阳极氧化工艺获得了排列有序的纳米孔。从纳米结构的扫描电子显微镜图像对缺陷进行了定性和定量分析。傅里叶变换(FFT)分析表明,三角形晶格的均匀性随阳极氧化电压的增加而逐渐增加,与温度无关。对于所有研究的温度,纳米孔排列的有序度和有序域的尺寸随阳极氧化电压的增加而增加。对不同的阳极氧化电压和温度进行了缺陷的定量分析,即所谓的德劳内三角剖分。在15至23V的槽电压下,产生缺陷的百分比是恒定的。在1℃的温度下,缺陷百分比等于20%,而在-8或10℃的温度下达到约30%的值。在25V的阳极氧化电压下,多孔氧化铝中产生缺陷的百分比急剧降低至约10%,与阳极氧化温度无关。在25V时可在阳极氧化表面获得缺陷数量最少的完美纳米孔排列。

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