InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm.
作者信息
Huang J Y, Liang H C, Su K W, Lai H C, Chen Y-F, Huang K F
机构信息
Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan.
出版信息
Appl Opt. 2007 Jan 10;46(2):239-42. doi: 10.1364/ao.46.000239.
PMID:17268570
Abstract
A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.
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