Totsuka H, Furuya S, Watanabe S
Department of Physics, College of Science and Technology, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 1018308, Japan.
Ultramicroscopy. 2007 Dec;108(1):11-6. doi: 10.1016/j.ultramic.2007.02.001. Epub 2007 Feb 20.
We have analyzed the effect of the tip atomic species on the tip-sample separation and the bias-voltage dependence of apparent barrier height (ABH) on an Al(100) surface using the boundary-matching scattering-state density functional method, which can be used to calculate electron states under applied bias voltages self-consistently within the density functional theory. We found that, from the dependence of the tip-sample separation, the difference between measurements with the two tip atomic species is larger in the ABH than in the maximum barrier height evaluated from the calculated potential profile. Furthermore, we found that the bias-polarity dependence of the ABH measured with the Na tip shows behavior opposite to that shown by the ABH measured with the Al tip. These results can be understood from the difference in the degree of lateral confinement of tunneling electrons in the tunneling barrier region between the two atomic species.
我们使用边界匹配散射态密度泛函方法,分析了尖端原子种类对Al(100)表面上尖端-样品间距以及表观势垒高度(ABH)的偏置电压依赖性的影响,该方法可用于在密度泛函理论内自洽地计算施加偏置电压下的电子态。我们发现,从尖端-样品间距的依赖性来看,两种尖端原子种类测量结果在ABH上的差异比根据计算出的势垒分布评估的最大势垒高度上的差异更大。此外,我们发现用Na尖端测量的ABH的偏置极性依赖性表现出与用Al尖端测量的ABH相反的行为。这些结果可以从两种原子种类在隧穿势垒区域中隧穿电子的横向限制程度的差异来理解。