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具有分级介孔结构的结晶五氧化二钒及其电容行为。

Crystalline vanadium pentoxide with hierarchical mesopores and its capacitive behavior.

作者信息

Liu Hongtao, He Ping, Li Zhiying, Sun Danzi, Huang Haiping, Li Jinghong, Zhu Guoyi

机构信息

State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China.

出版信息

Chem Asian J. 2006 Nov 20;1(5):701-6. doi: 10.1002/asia.200600169.

DOI:10.1002/asia.200600169
PMID:17441111
Abstract

Crystalline vanadium pentoxide with hierarchical mesopores was synthesized by using a CTAB/BMIC cotemplate (CTAB = cetyltrimethylammonium bromide, BMIC = 1-butyl-3-methylimidazolium chloride). The material was fully characterized by SEM, TEM, N2 adsorption-desorption, XRD, XPS, and CV methods. By elaborate adjustment of the template proportions, the distribution and size of the hierarchical pores were tuned successfully. CTAB cationic surfactant contributed more to the larger mesopores, whereas BMIC ionic liquid was beneficial in forming the smaller nanopores. The vanadium-containing anions combined with CTA+ micelles and BMI+ rings through electrostatic interactions. The CTA(+)-O(VO)O(-)-BMI(+) entities built up an orderly array, which finally formed the hierarchical mesoporous framework during thermal treatment. The mesoporous vanadium pentoxide directed by the cotemplate of CTAB/BMIC = 1:1 showed many orderly crystalline structures and demonstrated a large capacitance (225 F g(-1)); it is thus a promising material for electrochemical capacitors. Two alternative solutions to the disappearance of capacitance due to insertion of K+ are proposed in view of possible future applications.

摘要

采用十六烷基三甲基溴化铵/1-丁基-3-甲基咪唑氯盐共模板(CTAB = 十六烷基三甲基溴化铵,BMIC = 1-丁基-3-甲基咪唑氯盐)合成了具有分级介孔结构的结晶五氧化二钒。通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)、N₂吸附-脱附、X射线衍射(XRD)、X射线光电子能谱(XPS)和循环伏安法(CV)对该材料进行了全面表征。通过精心调整模板比例,成功调节了分级孔的分布和尺寸。CTAB阳离子表面活性剂对形成较大的介孔贡献更大,而BMIC离子液体则有利于形成较小的纳米孔。含钒阴离子通过静电相互作用与CTA⁺胶束和BMI⁺环结合。CTA⁺-O(VO)O⁻-BMI⁺实体形成有序阵列,最终在热处理过程中形成分级介孔框架。由CTAB/BMIC = 1:1共模板导向的介孔五氧化二钒呈现出许多有序的晶体结构,并表现出较大的电容(225 F g⁻¹);因此它是一种有前途的电化学电容器材料。鉴于未来可能的应用,针对由于K⁺插入导致电容消失的问题提出了两种替代解决方案。

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