Lee Taek Sung, Lee Hyun Seok, Cheong Byung-Ki, Jeong Jeung-Hyun, Kang Dae-Hwan, Zhe Wu, Kim Won Mok, Kim Donghwan, Cho Kyuman
Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea.
J Nanosci Nanotechnol. 2007 Jan;7(1):293-7.
An experimental study is conducted toward understanding the mechanism of nonlinear optical properties of PbTe thin film that were demonstrated potentially usable for nano-optical memory based on super-resolution technology. By way of a real time optical-electrical characterization of a PbTe thin film device, it is found that absorption coefficient decreases with increasing laser power, accompanied by increase in carrier concentration. From z-scan measurements, nonlinear optical coefficient due to a long pulse (1 micros) z-scan is found nearly 3 order of magnitude higher than the one due to a short pulse (30 ps) z-scan when input energy density is relatively comparable. Conceivably, these experimental findings call for a physical model that is able to account for the prevailing role of a thermal contribution within the framework of absorption saturation by band filling. We speculate that the absorption saturation might be enhanced dramatically by making various indirect interband transitions possible via participation of phonons in a photonic excitation process.
开展了一项实验研究,以了解PbTe薄膜的非线性光学特性机制,该特性已被证明可能用于基于超分辨率技术的纳米光学存储器。通过对PbTe薄膜器件进行实时光电表征,发现吸收系数随激光功率的增加而降低,同时载流子浓度增加。从z扫描测量结果来看,当输入能量密度相对可比时,长脉冲(1微秒)z扫描的非线性光学系数比短脉冲(30皮秒)z扫描的非线性光学系数高近3个数量级。可以想象,这些实验结果需要一个物理模型,该模型能够在带填充引起的吸收饱和框架内解释热贡献的主导作用。我们推测,通过使声子参与光子激发过程从而实现各种间接带间跃迁,吸收饱和可能会显著增强。