Ab initio study of the electronic structure and bonding of aluminum nitride.

For the diatomic aluminum nitride (AlN), we have constructed potential energy curves for 45 states employing multi-reference variational methods and quantitative basis sets. Thirty-six states are relatively strongly bound, five present local minima, and four are of repulsive nature. Almost all states are of intense multi-reference character rendering their calculation and interpretation quite problematic. Our tentative assignment of the ground state is 3Pi, while a 3Sigma- state is above by less than 1 kcal/mol. Our best estimate for the binding energy of the X3Pi state is D0 = 56.0 +/- 0.5 kcal/mol at re = 1.783 A, in good agreement with the experimental values of D = 66 +/- 9 kcal/mol and re = 1.7864 A. The binding energy of the A3Sigma- state is very similar to the X state because they both correlate to the ground-state atoms, but the bond distance of the former is 0.13 A longer. The first seven states can be tagged as follows: X3Pi, A3Sigma-, a1Sigma+, b1Pi, c1Delta, B3Sigma+, and d1Sigma+, a rather definitive order with the exception of X and A states.