Tsoi Shufen, Szeto Bryan, Fleischauer Michael D, Veinot Jonathan G C, Brett Michael J
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada.
Langmuir. 2007 Jun 5;23(12):6498-500. doi: 10.1021/la700722b. Epub 2007 May 5.
The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.
研究了衬底表面能和气相沉积速率对多孔柱状三（8-羟基喹啉）铝（Alq3）纳米结构初始生长的影响。观察到热蒸发到带有氧化物的供应态硅衬底上的Alq3纳米结构形成了一个固体润湿层，这可能是由于衬底和Alq3之间的界面能不匹配所致。润湿层厚度控制对于潜在的光电子应用很重要。通过将Alq3沉积到烷基三氯硅烷衍生化的Si/氧化物衬底上，实现了润湿层厚度的显著降低。随着沉积速率的增加也观察到了类似的效果。这两种效应使得能够对润湿层厚度进行调整。
