Suppr超能文献

Sn/Si(111)-(√3×√3)R30°的绝缘基态

Insulating ground state of Sn/Si(111)-(square root 3 x square root 3)R30 degrees.

作者信息

Modesti S, Petaccia L, Ceballos G, Vobornik I, Panaccione G, Rossi G, Ottaviano L, Larciprete R, Lizzit S, Goldoni A

机构信息

Laboratorio Nazionale TASC-INFM, S.S. 14 Km 163.5, 34012 Trieste, Italy.

出版信息

Phys Rev Lett. 2007 Mar 23;98(12):126401. doi: 10.1103/PhysRevLett.98.126401. Epub 2007 Mar 19.

Abstract

The Sn/Si(111)-(square root 3 x square root 3)R30 degrees surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].

摘要

根据电子计数理论,迄今为止人们认为Sn/Si(111)-(√3×√3)R30°表面是金属性的。我们通过隧穿光谱、扫描隧穿显微镜、光电子发射和光电子衍射表明,在70K以下,该表面在费米能级处的态密度非常低,且没有明显畸变。实验结果与LSDA+U计算[G. 普罗费塔和E. 托萨蒂,《物理评论快报》98, 086401 (2007)]预测的绝缘莫特-哈伯德基态相符。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验