Nevirkovets I P, Shafranjuk S E, Chernyashevskyy O, Ketterson J B
Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA.
Phys Rev Lett. 2007 Mar 23;98(12):127002. doi: 10.1103/PhysRevLett.98.127002. Epub 2007 Mar 19.
A large, reentrant, Josephson current is observed in SINIS (Nb/Al/AlOx/Al/AlOx/Al/Nb) junctions at a finite voltage close to Delta/e (where Delta is the superconducting energy gap in S) and a bias current exceeding the zero-voltage Josephson current. The effect is studied using a multiterminal device configuration. A theoretical interpretation in terms of quantized electron states in the N layer is provided.
在SINIS（铌/铝/氧化铝/铝/氧化铝/铝/铌）结中，当电压接近Δ/e（其中Δ是超导体S中的超导能隙）且偏置电流超过零电压约瑟夫森电流时，观察到一个大的、重入的约瑟夫森电流。使用多端器件配置对该效应进行了研究。提供了一种基于N层中量子化电子态的理论解释。
