Van Vlack C, Hughes S
Department of Physics, Queen's University, Kingston, ON K7L 3N6 Canada.
Phys Rev Lett. 2007 Apr 20;98(16):167404. doi: 10.1103/PhysRevLett.98.167404. Epub 2007 Apr 19.
Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.
在共振光学整流的范围内研究了半导体中的超短脉冲光与物质相互作用。对于5飞秒的脉冲持续时间，使用约1.5 - 3.5π的脉冲包络面积，证明了单次对载波包络偏移相位（CEP）的依赖性。利用薄膜砷化镓的参数预测了几种不同频率范围的特征相位图。随后，我们提出了一种可能的技术，使用固态探测器提取CEP的符号和幅度。
