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在高温超导体Bi2Sr2CaCu2O8+δ中在原子尺度上可视化配对形成。

Visualizing pair formation on the atomic scale in the high-Tc superconductor Bi2Sr2CaCu2O8+delta.

作者信息

Gomes Kenjiro K, Pasupathy Abhay N, Pushp Aakash, Ono Shimpei, Ando Yoichi, Yazdani Ali

机构信息

Department of Physics, Joseph Henry Laboratories, Princeton University, Princeton, New Jersey 08544, USA.

出版信息

Nature. 2007 May 31;447(7144):569-72. doi: 10.1038/nature05881.

DOI:10.1038/nature05881
PMID:17538615
Abstract

Pairing of electrons in conventional superconductors occurs at the superconducting transition temperature T(c), creating an energy gap Delta in the electronic density of states (DOS). In the high-T(c) superconductors, a partial gap in the DOS exists for a range of temperatures above T(c) (ref. 2). A key question is whether the gap in the DOS above T(c) is associated with pairing, and what determines the temperature at which incoherent pairs form. Here we report the first spatially resolved measurements of gap formation in a high-T(c) superconductor, measured on Bi2Sr2CaCu2O8+delta samples with different T(c) values (hole concentration of 0.12 to 0.22) using scanning tunnelling microscopy. Over a wide range of doping from 0.16 to 0.22 we find that pairing gaps nucleate in nanoscale regions above T(c). These regions proliferate as the temperature is lowered, resulting in a spatial distribution of gap sizes in the superconducting state. Despite the inhomogeneity, we find that every pairing gap develops locally at a temperature T(p), following the relation 2Delta/k(B)T(p) = 7.9 +/- 0.5. At very low doping (< or =0.14), systematic changes in the DOS indicate the presence of another phenomenon, which is unrelated and perhaps competes with electron pairing. Our observation of nanometre-sized pairing regions provides the missing microscopic basis for understanding recent reports of fluctuating superconducting response above T(c) in hole-doped high-T(c) copper oxide superconductors.

摘要

传统超导体中的电子配对发生在超导转变温度T(c),在电子态密度(DOS)中产生一个能隙Δ。在高温超导材料中,在高于T(c)的一定温度范围内,DOS中存在一个部分能隙(参考文献2)。一个关键问题是高于T(c)时DOS中的能隙是否与配对相关,以及是什么决定了非相干对形成的温度。在这里,我们报告了对高温超导材料中能隙形成的首次空间分辨测量,使用扫描隧道显微镜对具有不同T(c)值(空穴浓度为0.12至0.22)的Bi2Sr2CaCu2O8+δ样品进行测量。在从0.16到0.22的广泛掺杂范围内,我们发现配对能隙在高于T(c)的纳米级区域中形核。随着温度降低,这些区域会扩散,导致超导态下能隙大小的空间分布。尽管存在不均匀性,但我们发现每个配对能隙都在温度T(p)处局部形成,遵循关系2Δ/k(B)T(p)=7.9±0.5。在非常低的掺杂(≤0.14)时,DOS的系统变化表明存在另一种现象,它与电子配对无关,甚至可能与之竞争。我们对纳米尺寸配对区域的观察为理解最近关于空穴掺杂高温铜氧化物超导体中高于T(c)的波动超导响应的报道提供了缺失的微观基础。

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