Sinha Supriyo, Urbanek Karel E, Hum David S, Digonnet Michel J F, Fejer Martin M, Byer Robert L
Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085, USA.
Opt Lett. 2007 Jun 1;32(11):1530-2. doi: 10.1364/ol.32.001530.
A high-power linearly polarized Yb-doped silica fiber master oscillator power amplifier at 1150 nm is reported. It produced 3.35 W cw and 2.33 W of average power in 1 micros pulses at a 100 kHz repetition rate, both with 8 pm linewidth. This is the first report, to the best of our knowledge, of a high-power Yb-doped fiber amplifier at a wavelength longer than 1135 nm. The pulsed output was frequency doubled in a bulk periodically poled near-stoichiometric LiTaO(3) chip to generate 976 mW of average power at 575 nm with an overall system optical-to-optical efficiency of 9.8% with respect to launched pump power.
报道了一种在1150nm波长下的高功率线性偏振掺镱石英光纤主振荡功率放大器。它在100kHz重复频率下产生了3.35W连续波和2.33W平均功率的1微秒脉冲，线宽均为8皮米。据我们所知，这是首次报道波长大于1135nm的高功率掺镱光纤放大器。脉冲输出在块状周期性极化近化学计量比的钽酸锂（LiTaO₃）芯片中进行倍频，以在575nm波长下产生976mW平均功率，相对于注入泵浦功率，整个系统的光光效率为9.8%。
