[通过傅里叶变换红外光谱法对磁控溅射沉积非晶态二氧化硅薄膜的研究]

[A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method].

作者信息

Wang Shen-wei, Yi Li-xin, Su Meng-chan, Chen En-guang, Wang Yong-sheng

机构信息

Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.

出版信息

Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Mar;27(3):456-9.

PMID:17554897

Abstract

Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors' investigation shows that Si-Oy-Si(4-y) (0 < y < or =4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing. The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si--O--Si bond and the vibration of O--Si--O bond corresponding to the above mentioned structures in the SiOx films.

摘要

采用磁控溅射技术在硅衬底上沉积非晶态SiOₓ薄膜。通过傅里叶变换红外光谱检测到SiOₓ薄膜的三个吸收带。作者的研究表明，随着溅射功率的增加，薄膜中形成了Si - Oy - Si(4 - y)（0 < y ≤ 4）、Si6环和非桥氧空穴中心缺陷。这三个吸收带的出现是由于SiOₓ薄膜中上述结构对应的Si - O - Si键的伸缩和不对称伸缩振动以及O - Si - O键的振动。