Manimozhi P K, Muralidharan G
Department of Physics, Gandhigram Rural University, Gandhigram 624 302, Tamilnadu, India.
Luminescence. 2007 Sep-Oct;22(5):468-72. doi: 10.1002/bio.986.
Optical absorption, photoluminescence, thermoluminescence (TL) and photostimulated luminescence (PSL) studies on RbI:Tb(3+) crystals irradiated with gamma-rays is reported. Photoluminescence of these crystals exhibits characteristic Tb(3+) emissions, due to transitions from the (5)D(3) and (5)D(4) levels to various levels of the (7)F septet. On F-bleaching the gamma-irradiated crystals, Z(3) centres are observed. The TL glow curve indicates a two-step thermal annihilation process for the radiatively created defects. The presence of the characteristic emissions due to terbium ions in the photostimulation at the F-band, and TL emissions under both glow peaks, confirm the participation of Tb ions in the defect production and recombination processes. Trap parameters for the TL process are calculated and presented. The low temperature glow peak is attributable to Z(3) centres.
报道了对经γ射线辐照的RbI:Tb(3+)晶体进行的光吸收、光致发光、热释光（TL）和光激发发光（PSL）研究。这些晶体的光致发光表现出特征性的Tb(3+)发射，这是由于从(5)D(3)和(5)D(4)能级跃迁到(7)F七重态的各个能级所致。在对γ辐照晶体进行F漂白时，观察到了Z(3)中心。热释光发光曲线表明，对于辐射产生的缺陷存在两步热湮灭过程。在F波段光激发过程中由于铽离子产生的特征发射以及两个发光峰下的热释光发射，证实了Tb离子参与了缺陷产生和复合过程。计算并给出了热释光过程的陷阱参数。低温发光峰归因于Z(3)中心。
