硫化镉和硫化锌半导体纳米晶体的生长。
Growth of semiconducting nanocrystals of CdS and ZnS.
作者信息
Viswanatha Ranjani, Sapra Sameer, Amenitsch Heinz, Sartori Barbara, Sarma D D
机构信息
Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India.
出版信息
J Nanosci Nanotechnol. 2007 Jun;7(6):1726-9. doi: 10.1166/jnn.2007.706.
In this work, we report the study of growth of CdS as well as ZnS nanocrystals using in-situ small angle X-ray scattering (SAXS) technique, in presence of thio-glycerol as capping agent. We observe that the diameter of the nanocrystal is controlled between 1 and 3 nm by varying the temperature of the reaction. Further, the self-focusing of the size distribution can be observed and is more pronounced at higher temperatures reducing its relative width from 25% to 10%.
在这项工作中，我们报告了在硫代甘油作为封端剂存在的情况下，使用原位小角X射线散射（SAXS）技术对硫化镉以及硫化锌纳米晶体生长的研究。我们观察到，通过改变反应温度，纳米晶体的直径可控制在1至3纳米之间。此外，可以观察到尺寸分布的自聚焦现象，并且在较高温度下更为明显，其相对宽度从25%减小到10%。
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