Suenaga K, Higashihara S, Ohashi M, Oomi G, Hedo M, Uwatoko Y, Saito K, Mitani S, Takanashi K
Department of Physics, Kyushu University, Ropponmatsu, Fukuoka 810-8560, Japan.
Phys Rev Lett. 2007 May 18;98(20):207202. doi: 10.1103/PhysRevLett.98.207202. Epub 2007 May 16.
We report the first observation of a large pressure-induced enhancement of giant magnetoresistance (GMR) in magnetic multilayers (MML). In Fe/Cr MMLs with the Cr layer thickness of approximately 30 A, a crossover from biquadratic to bilinear interlayer exchange coupling (IEC) was observed by applying pressure, and simultaneously the GMR under high pressure (>2 GPa) was enhanced to be twice as large as that at ambient pressure. The enhanced GMR is attributed to the suppression of the biquadratic IEC by applying pressure, and the electrical resistivity in parallel alignment of magnetization also showed a crossover behavior, suggesting an electronic origin for the observed pressure effects.
我们报道了首次观察到在磁性多层膜(MML)中,压力诱导的巨磁电阻(GMR)大幅增强。在Cr层厚度约为30埃的Fe/Cr MML中,通过施加压力观察到了从双二次层间交换耦合(IEC)到双线性层间交换耦合的转变,同时高压(>2 GPa)下的GMR增强到常压下的两倍。增强的GMR归因于施加压力对双二次IEC的抑制,并且磁化平行排列时的电阻率也表现出转变行为,这表明所观察到的压力效应具有电子起源。