Zsurzsa Sándor, El-Tahawy Moustafa, Péter László, Kiss László Ferenc, Gubicza Jenő, Molnár György, Bakonyi Imre
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Konkoly-Thege út 29-33, H-1121 Budapest, Hungary.
Department of Materials Physics, Eötvös Loránd University, Pázmány Péter Sétány 1/A, H-1117 Budapest, Hungary.
Nanomaterials (Basel). 2022 Dec 1;12(23):4276. doi: 10.3390/nano12234276.
Electrodeposited NiCo/Cu multilayers were prepared with Cu spacer layer thicknesses between 0.5 nm and 7 nm. Their structure and magnetic and magnetoresistance properties were investigated. An important feature was that the Cu layers were deposited at the electrochemically optimized Cu deposition potential, ensuring a reliable control of the spacer layer thickness to reveal the true evolution of the giant magnetoresistance (GMR). X-ray diffraction indicated satellite reflections, demonstrating the highly coherent growth of these multilayer stacks. All of the multilayers exhibited a GMR effect, the magnitude of which did not show an oscillatory behavior with spacer layer thickness, just a steep rise of GMR around 1.5 nm and then, after 3 nm, it remained nearly constant, with a value around 4%. The high relative remanence of the magnetization hinted at the lack of an antiferromagnetic coupling between the magnetic layers, explaining the absence of oscillatory GMR. The occurrence of GMR can be attributed to the fact that, for spacer layer thicknesses above about 1.5 nm, the adjacent magnetic layers become uncoupled and their magnetization orientation is random, giving rise to a GMR effect. The coercive field and magnetoresistance peak field data also corroborate this picture: with increasing spacer layer thickness, both parameters progressively approached values characteristic of individual magnetic layers. At the end, a critical analysis of previously reported GMR data on electrodeposited Ni-Co/Cu multilayers is provided in view of the present results. A discussion of the layer formation processes in electrodeposited multilayers is also included, together with a comparison with physically deposited multilayers.
制备了铜间隔层厚度在0.5纳米至7纳米之间的电沉积镍钴/铜多层膜。研究了它们的结构、磁性和磁阻特性。一个重要的特点是,铜层是在电化学优化的铜沉积电位下沉积的,从而确保了对间隔层厚度的可靠控制,以揭示巨磁阻(GMR)的真实演变。X射线衍射显示出卫星反射,证明了这些多层堆叠的高度相干生长。所有多层膜都表现出巨磁阻效应,其大小并未随间隔层厚度呈现振荡行为,只是在1.5纳米左右巨磁阻急剧上升,然后在3纳米之后,它几乎保持恒定,值约为4%。高相对剩余磁化暗示了磁性层之间缺乏反铁磁耦合,这解释了巨磁阻振荡的缺失。巨磁阻的出现可归因于这样一个事实,即对于间隔层厚度大于约1.5纳米时,相邻的磁性层变得解耦且其磁化方向是随机的,从而产生了巨磁阻效应。矫顽场和磁阻峰值场数据也证实了这一情况:随着间隔层厚度的增加,这两个参数逐渐接近单个磁性层的特征值。最后,鉴于当前结果,对先前报道的电沉积镍钴/铜多层膜的巨磁阻数据进行了批判性分析。还包括了对电沉积多层膜中层形成过程的讨论,以及与物理沉积多层膜的比较。