Science. 1990 Jul 27;249(4967):391-3. doi: 10.1126/science.249.4967.391.
The vibrational Raman spectrum of solid hydrogen has been measured from 77 to 295 K in the vicinity of the recently observed insulator-metal transition and low-temperature phase transition at 150 gigapascals (1.5 megabars). The measurements provide evidence for a critical point in the pressure-temperature phase boundary of the low-temperature transition. The result suggests that below the critical temperature the insulator-metal transition changes from continuous to discontinuous, consistent with the general criteria originally proposed by Mott for metallization by band-gap closure. The effect of temperature on hydrogen metallization closely resembles that of the lower pressure insulator-metal transitions in doped V(2)O(3) alloys.
已在 77 至 295 K 的温度范围内,对 150 吉帕斯卡(1.5 兆巴)附近最近观察到的绝缘-金属转变和低温相变附近的固态氢的振动拉曼光谱进行了测量。这些测量结果为低温相变的压力-温度相边界中的临界点提供了证据。结果表明,在临界温度以下,绝缘-金属转变从连续转变为不连续,这与莫特最初提出的由于能带隙闭合而导致金属化的一般标准一致。温度对氢金属化的影响与掺杂 V(2)O(3)合金中较低压力下的绝缘-金属转变非常相似。