Limelette P, Georges A, Jérome D, Wzietek P, Metcalf P, Honig J M
Laboratoire de Physique des Solides (CNRS, U.R.A. 8502), Bâtiment 510, Université de Paris-Sud, 91405 Orsay, France.
Science. 2003 Oct 3;302(5642):89-92. doi: 10.1126/science.1088386.
We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott insulator to metal critical endpoint is investigated in detail as a function of pressure and temperature. The critical exponents are determined, as well as the scaling function associated with the equation of state. The universal properties of a liquid-gas transition are found. This is potentially a generic description of the Mott critical endpoint in correlated electron materials.
我们报告了使用可变压力技术对Cr掺杂V2O3进行的电导率测量。详细研究了在莫特绝缘体到金属临界端点附近电导率的临界行为,作为压力和温度的函数。确定了临界指数以及与状态方程相关的标度函数。发现了液-气转变的普适性质。这可能是对关联电子材料中莫特临界端点的一种通用描述。