Hashimoto Kohei, Kannari Fumihiko
Department of Electronics and Electrical Engineering, Faculty of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan.
Opt Lett. 2007 Sep 1;32(17):2493-5. doi: 10.1364/ol.32.002493.
A cw Pr(3+):LiYF(4) laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.
展示了一种由高功率氮化镓激光二极管（444纳米）泵浦的639纳米连续波Pr(3+)：LiYF(4)激光器。在光-光转换效率为33.5%的情况下实现了112毫瓦的最高激光功率。还针对激光投影仪等实际应用研究了该激光器在高温下的特性。
