用扫描隧道显微镜研究 C60 在 GaAs(110)上的有序覆盖层。

Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy.

出版信息

Science. 1991 Apr 26;252(5005):547-8. doi: 10.1126/science.252.5005.547.

DOI:10.1126/science.252.5005.547

Abstract

Studies of C(60) overlayer growth on GaAs(110) with scanning tunneling microscopy show large first monolayer islands that are locally well ordered, structurally stable, and commensurate with the GaAs surface owing to molecule-substrate interactions. Within the distorted close-packed structure, two distinct adsorption sites were identified, one of them being elevated because of stress in the C(60) monolayer.

摘要

用扫描隧道显微镜研究 C(60)在 GaAs(110)上的覆盖层生长表明，大的第一层岛是局部有序的、结构稳定的，并且由于分子-衬底相互作用与 GaAs 表面共格。在扭曲的密堆积结构中，确定了两个不同的吸附位，其中一个由于 C(60)单层中的应力而升高。