Science. 1994 Jun 17;264(5166):1740-5. doi: 10.1126/science.264.5166.1740.
Luminescent centers with sharp (<0.07 millielectron volt), spectrally distinct emission lines were imaged in a GaAs/AIGaAs quantum well by means of low-temperature near-field scanning optical microscopy. Temperature, magnetic field, and linewidth measurements establish that these centers arise from excitons laterally localized at interface fluctuations. For sufficiently narrow wells, virtually all emission originates from such centers. Near-field microscopy/spectroscopy provides a means to access energies and homogeneous line widths for the individual eigenstates of these centers, and thus opens a rich area of physics involving quantum resolved systems.
通过低温近场扫描光学显微镜，在 GaAs/AIGaAs 量子阱中观察到具有尖锐（<0.07 毫电子伏特）、光谱明显不同发射线的荧光中心。温度、磁场和线宽测量表明，这些中心是由界面波动横向局域的激子产生的。对于足够窄的阱，几乎所有的发射都来自于这些中心。近场显微镜/光谱学提供了一种方法，可以获得这些中心的各个本征态的能量和均匀线宽，从而开辟了一个涉及量子分辨系统的丰富物理领域。
