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通过在聚对苯撑乙烯中引入无序结构实现发光增强。

Luminescence Enhancement by the Introduction of Disorder into Poly(p-phenylene vinylene).

作者信息

Son S, Dodabalapur A, Lovinger A J, Galvin M E

出版信息

Science. 1995 Jul 21;269(5222):376-8. doi: 10.1126/science.269.5222.376.

Abstract

A method is described for increasing luminescence in poly(p-phenylene vinylene) (PPV) light-emitting diodes. Cis linkages were engineered into the PPV chain. These linkages interrupt conjugation and interfere with the packing of the polymer chains, which results in the formation of amorphous PPV. Large-area electroluminescent devices were prepared from this polymer. Devices made of an aluminum electrode, PPV as the luminescent layer, and an electron-transporting layer have internal quantum efficiencies of 2 percent, a turn-on voltage of 20 volts, and can carry current densities of 2000 milliamperes per square centimeter. The current density is at least an order of magnitude higher than previously obtained.

摘要

描述了一种提高聚对苯撑乙烯(PPV)发光二极管发光强度的方法。顺式键被引入到PPV链中。这些键会中断共轭并干扰聚合物链的堆积,从而导致非晶态PPV的形成。用这种聚合物制备了大面积的电致发光器件。由铝电极、作为发光层的PPV和电子传输层制成的器件,其内部量子效率为2%,开启电压为20伏,并且能够承载每平方厘米2000毫安的电流密度。该电流密度比之前获得的至少高一个数量级。

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