Science. 1965 Jul 30;149(3683):535-7. doi: 10.1126/science.149.3683.535.
Crystal structures of the tetragonal forms of germanium and silicon disulfide are similar and consist of (SiS(4))(4-) and (GeS(4))(4-) tetrahedra which share vertices to form three-dimensional networks. These tetragonal materials, synthesized at high pressure and temperature, are different from the previously known germanium and silicon disulfides.
四方晶系的锗和二硫化硅的晶体结构相似，由 (SiS(4))(4-) 和 (GeS(4))(4-) 四面体通过共享顶点形成三维网络。这些在高压高温下合成的四方晶系材料与之前已知的锗和二硫化硅不同。
