Ramesh R, Inam A, Chan W K, Wilkens B, Myers K, Remschnig K, Hart D L, Tarascon J M
Science. 1991 May 17;252(5008):944-6. doi: 10.1126/science.252.5008.944.
Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.
通过脉冲激光沉积在 SrTiO₃、LaAlO₃ 和 MgAl₂O₄ 单晶上生长了 Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x) 的薄膜异质结构。X 射线衍射研究表明仅存在 c 轴取向;卢瑟福背散射实验表明其组成接近标称化学计量。这些薄膜是铁电的,并呈现出对称的磁滞回线。剩余极化强度为每平方厘米 1.0 微库仑,矫顽场为每厘米 2.0×10⁵ 伏。以 YBa(2)Cu(3)O(7 - x) 和 Bi(2)Sr(2)CaCu(2)O(8 + x) 以及单晶 Bi(2)Sr(2)CuO(6 + x) 作为底部电极时也获得了类似结果。这些薄膜有望用作非易失性存储器应用中的新型、晶格匹配的外延铁电薄膜/电极异质结构。