Xie Fang, Hu Hui-Fang, We Jian-Wei, Zeng Hui, Peng Ping
Department of Applied Physics, Hunan University, Changsha 410082, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2007 Jul;27(7):1267-70.
The energy band structures, optical absorption spectra and reflectivity of the semiconducting single-wall carbon nano-tubes (7,0) and (8,0), with symmetrical Stone-Wales defects on (7,0) and symmetrical Stone-Wales defects on (8,0) and (7, 0)-(8,0) SWCNT heterojunction were studied using the density functional theory, and the results were compared. It is shown that the energy band structures have changed obviously, and according to different kind of defects the Fermi energy levels were shifted in different direction. The absorption and reflectivity weakened obviously and red shift of absorption peak and reflectivity peak have occurred in the lower energy region, when the carbon nanotube contained topological defects compared to perfect single-wall carbon nanotubes. There was a distinct peak in the five carbon nanotubes at the photon energy of about E = 13 eV, and the peak shifted to high energy region when the nanotube contained defects. The results were analyzed and discussed theoretically. The authors can take advantage of the photoelectricity property created by topological defect to design photoelectricity device.
利用密度泛函理论研究了具有对称斯通-威尔士缺陷的半导体单壁碳纳米管(7,0)和(8,0)、(7,0)上的对称斯通-威尔士缺陷、(8,0)上的对称斯通-威尔士缺陷以及(7,0)-(8,0)单壁碳纳米管异质结的能带结构、光吸收光谱和反射率,并对结果进行了比较。结果表明,能带结构发生了明显变化,费米能级根据不同类型的缺陷向不同方向移动。与完美的单壁碳纳米管相比,当碳纳米管含有拓扑缺陷时,吸收和反射率明显减弱,吸收峰和反射率峰在较低能量区域发生红移。在约E = 13 eV的光子能量下,这五种碳纳米管中都有一个明显的峰,当纳米管含有缺陷时,该峰向高能区域移动。对结果进行了理论分析和讨论。作者可以利用拓扑缺陷产生的光电特性来设计光电器件。