Liu Zengtao, Li Chen, Fu Yanpeng, Yang Yong
State Key Laboratory for Physical Chemistry of Solid Surface, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, PR China.
J Nanosci Nanotechnol. 2007 Sep;7(9):3152-6. doi: 10.1166/jnn.2007.697.
High quality wurtzite CdS nanowires have been synthesized by thermal evaporation of CdS powder onto Si substrate in the presence of Au catalyst at 650 degrees C by using pure H2 as a carrier gas. The nanowires were 10 nm in diameter and a few tens of micrometers in length. XRD patterns demonstrated that as prepared CdS is a pure crystalline material. High-resolution transmission electron microscopy of the materials showed that all CdS nanowires grew along (0001). According to analysis of selective area electron diffraction patterns taken from the interface, we proposed that there is a kind of epitaxy relationship in the interface region between Au catalyst and CdS grown, i.e., (0001)CdS // (111)Au, and [1210]CdS // [011]Au.
通过在650摄氏度下，以纯氢气作为载气，在金催化剂存在的情况下，将硫化镉粉末热蒸发到硅衬底上，合成了高质量的纤锌矿型硫化镉纳米线。这些纳米线直径为10纳米，长度为几十微米。X射线衍射图谱表明，所制备的硫化镉是一种纯晶体材料。对该材料进行的高分辨率透射电子显微镜观察显示，所有硫化镉纳米线均沿(0001)方向生长。根据对取自界面的选区电子衍射图谱的分析，我们提出在金催化剂与生长的硫化镉之间的界面区域存在一种外延关系，即(0001)CdS // (111)Au，以及[1210]CdS // [011]Au。
