锗在Ag(111)上的吸附：俄歇电子能谱-低能电子衍射和扫描隧道显微镜研究

Germanium adsorption on Ag(111): an AES-LEED and STM study.

作者信息

Oughaddou H, Mayne A, Aufray B, Bibérian J P, Le Lay G, Ealet B, Dujardin G, Kara A

机构信息

CRMN, Centre National de la Recherche Scientifique, Campus de Luminy, Case 913, 13288 Marseille Cedex 09, France.

出版信息

J Nanosci Nanotechnol. 2007 Sep;7(9):3189-92. doi: 10.1166/jnn.2007.677.

DOI:10.1166/jnn.2007.677

PMID:18019148

Abstract

The adsorption of germanium on Ag(111) has been investigated using Scanning Tunneling Microscopy, Auger Electron Spectroscopy and Low Energy Electron Diffraction. From the shape of the Auger peak-to-peak versus time curves, we deduce that at room temperature the growth mode is nearly layer-by-layer at least for the first two layers. In the sub-monolayer range, the growth starts by the formation of a (mean square root of 3 x mean square root of 3)R30 degrees surface superstructure which is complete at 1/3 monolayer coverage. Beyond this coverage a rectangular c(mean square root of 3 x 7) superstructure is observed. STM images reveal that this last reconstruction is formed by an ordered arrangement of self-assembled Ge tetramers giving rise to a surprising undulation of the surface.

摘要

利用扫描隧道显微镜、俄歇电子能谱和低能电子衍射研究了锗在Ag(111)上的吸附。从俄歇峰峰间距与时间的曲线形状，我们推断出在室温下，至少在前两层，生长模式几乎是逐层的。在亚单层范围内，生长开始于形成一个（根号3×根号3）R30°表面超结构，该结构在1/3单层覆盖时完成。超过这个覆盖度，观察到一个矩形c（根号3×7）超结构。扫描隧道显微镜图像显示，最后的这种重构是由自组装的锗四聚体有序排列形成的，导致表面出现令人惊讶的起伏。