Al-1.6at% Ge合金中锗析出物的透射电子显微镜表征

TEM characterization of Ge precipitates in an Al-1.6at% Ge alloy.

作者信息

Kaneko K, Inoke K, Sato K, Kitawaki K, Higashida H, Arslan I, Midgley P A

机构信息

Department of Material Science and Engineering, Kyushu University, 744 Motooka, Nishi, Fukuoka, Japan.

出版信息

Ultramicroscopy. 2008 Feb;108(3):210-20. doi: 10.1016/j.ultramic.2007.04.020. Epub 2007 Oct 23.

DOI:10.1016/j.ultramic.2007.04.020

PMID:18037565

Abstract

The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography.

摘要

通过原位透射电子显微镜、高分辨率透射电子显微镜和三维电子断层扫描相结合的方法，对铝锗合金中锗沉淀物的生长机制和形态进行了表征。通过原位透射电子显微镜在不同时间段观察到棒状锗沉淀物的各向异性生长，利用高分辨率透射电子显微镜和三维电子断层扫描可以清楚地看到沉淀物的刻面。如之前所提出的，棒状锗沉淀物的这种各向异性生长因空位浓度而增强，但原位实验期间观察到的表面扩散也起到了促进作用。此外，通过三维电子断层扫描识别出了多种沉淀物形态。