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阴离子聚电解质在化学机械抛光(CMP)中的吸附行为。

Adsorption behavior of anionic polyelectrolyte for chemical mechanical polishing (CMP).

作者信息

Kim Sarah, So Jae-Hyun, Lee Dong-Jun, Yang Seung-Man

机构信息

National CRI Center for Integrated Optofluidic Systems and Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea.

出版信息

J Colloid Interface Sci. 2008 Mar 1;319(1):48-52. doi: 10.1016/j.jcis.2007.11.004. Epub 2007 Nov 13.

Abstract

In this work, we investigated the adsorption characteristics of anionic polyelectrolytes, which are used in shallow trench isolation chemical mechanical polishing with ceria abrasives. Specifically, the adsorption isotherms and chain conformation of anionic polyelectrolytes were studied in order to elucidate the difference in removal rates of silicon dioxide (SiO2) and silicon nitride (Si3N4) layers and the high selectivity characteristics of ceria slurry. Adsorption isotherms, FT-IR spectroscopy and contact angle measurements revealed that the anionic polyelectrolyte additives had much better adsorption affinities for the Si3N4 surface than for the SiO2 surface. Moreover, blanket wafer polishing results were successfully correlated with the adsorption isotherms of polyelectrolytes on the oxide particle suspensions.

摘要

在本工作中,我们研究了用于浅沟槽隔离化学机械抛光(使用氧化铈磨料)的阴离子聚电解质的吸附特性。具体而言,研究了阴离子聚电解质的吸附等温线和链构象,以阐明二氧化硅(SiO₂)层和氮化硅(Si₃N₄)层去除速率的差异以及氧化铈浆料的高选择性特性。吸附等温线、傅里叶变换红外光谱(FT-IR)和接触角测量表明,阴离子聚电解质添加剂对Si₃N₄表面的吸附亲和力比对SiO₂表面的吸附亲和力要好得多。此外,整片晶圆抛光结果与聚电解质在氧化物颗粒悬浮液上的吸附等温线成功相关。

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