Bell J Jeremiah, Ellis Jason S, Guloglu F Betul, Tartar Danielle M, Lee Hyun-Hee, Divekar Rohit D, Jain Renu, Yu Ping, Hoeman Christine M, Zaghouani Habib
Department of Molecular Microbiology and Immunology, University of Missouri School of Medicine, Columbia, MO 65212, USA.
J Immunol. 2008 Jan 1;180(1):179-87. doi: 10.4049/jimmunol.180.1.179.
Currently, transition of T cells from effector to memory is believed to occur as a consequence of exposure to residual suboptimal Ag found in lymphoid tissues at the waning end of the effector phase and microbial clearance. This led to the interpretation that memory arises from slightly activated late effectors producing reduced amounts of IFN-gamma. In this study, we show that CD4 T cells from the early stage of the effector phase in which both the Ag and activation are optimal also transit to memory. Moreover, early effector T cells that have undergone four divisions expressed significant IL-7R, produced IFN-gamma, and yielded rapid and robust memory responses. Cells that divided three times that had marginal IL-7R expression and no IFN-gamma raised base level homeostatic memory, whereas those that have undergone only two divisions and produced IFN-gamma yielded conditioned memory despite low IL-7R expression. Thus, highly activated early effectors generated under short exposure to optimal Ag in vivo develop into memory, and such transition is dependent on a significant production of the cell's signature cytokine, IFN-gamma.
目前,人们认为T细胞从效应细胞转变为记忆细胞是效应阶段末期和微生物清除时在淋巴组织中接触到残留的次优抗原的结果。这导致了一种解释,即记忆细胞源于轻度激活的晚期效应细胞产生的干扰素-γ量减少。在本研究中,我们发现效应阶段早期的CD4 T细胞,此时抗原和激活均处于最佳状态,也会转变为记忆细胞。此外,经历了四轮分裂的早期效应T细胞表达了显著水平的IL-7R,产生了干扰素-γ,并产生了快速而强烈的记忆反应。分裂三次的细胞IL-7R表达微弱且不产生干扰素-γ,产生了基础水平的稳态记忆,而那些仅经历两轮分裂并产生干扰素-γ的细胞尽管IL-7R表达较低,但产生了适应性记忆。因此,在体内短时间接触最佳抗原条件下产生的高度激活的早期效应细胞会发育为记忆细胞,这种转变依赖于细胞标志性细胞因子干扰素-γ的大量产生。