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血红蛋白和肌红蛋白在溴化双十二烷基二甲基铵修饰的粉末微电极上的直接电化学及其在一氧化氮电化学检测中的应用。

Direct electrochemistry of hemoglobin and myoglobin at didodecyldimethylammonium bromide-modified powder microelectrode and application for electrochemical detection of nitric oxide.

作者信息

Guo Zhimou, Chen Jian, Liu Huan, Cha Chuansin

机构信息

Laboratory of Electrochemistry, College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, PR China.

出版信息

Anal Chim Acta. 2008 Jan 21;607(1):30-6. doi: 10.1016/j.aca.2007.11.038. Epub 2007 Nov 28.

Abstract

Hemoglobin (Hb) and myoglobin (Mb) were immobilized at the didodecyldimethylammonium bromide (DDAB)-modified powder microelectrode (PME) to fabricate Hb-DDAB-PME and Mb-DDAB-PME. Direct electrochemistry of Hb and Mb were achieved on the DDAB-modified PME. The formal potential was -0.224 V for Hb and -0.212 V for Mb (vs. SCE). The apparent surface concentration of Hb and Mb at the electrode surface was 2.83 x 10(-8) and 9.94 x 10(-8) mol cm(-2). The Hb-DDAB-PME and Mb-DDAB-PME were successfully applied for measurement of NO in vitro. The anodic current peaks for NO oxidation at +0.7 V and the cathodic current peaks for NO reduction at -0.85 V on the CV curves were obtained on the modified electrodes. For detection of NO at +0.7 V, the sensitivity is 3.31 mA microM(-1) cm(-2) for Hb-DDAB-PME and 0.6 mA microM(-1) cm(-2) for Mb-DDAB-PME. The detection limit is 5 nM for Hb-DDAB-PME and 9 nM for Mb-DDAB-PME. The linear response range is 9-100 and 28-330 nM for Hb- and Mb-modified PME, respectively. For the electrochemical detection of NO at -0.85 V by using Hb-DDAB-PME, the detection sensitivity is 39.56 microA microM(-1) cm(-2); the detection limit is as low as 0.2 microM; and the linear response range is 1.90-28.08 microM.

摘要

将血红蛋白(Hb)和肌红蛋白(Mb)固定在溴化双十二烷基二甲基铵(DDAB)修饰的粉末微电极(PME)上,制备了Hb-DDAB-PME和Mb-DDAB-PME。在DDAB修饰的PME上实现了Hb和Mb的直接电化学。Hb的形式电位为-0.224 V,Mb的形式电位为-0.212 V(相对于饱和甘汞电极)。电极表面Hb和Mb的表观表面浓度分别为2.83×10⁻⁸和9.94×10⁻⁸ mol cm⁻²。Hb-DDAB-PME和Mb-DDAB-PME成功应用于体外NO的测定。在修饰电极上获得了循环伏安曲线上+0.7 V处NO氧化的阳极电流峰和-0.85 V处NO还原的阴极电流峰。对于在+0.7 V处检测NO,Hb-DDAB-PME的灵敏度为3.31 mA μM⁻¹ cm⁻²,Mb-DDAB-PME的灵敏度为0.6 mA μM⁻¹ cm⁻²。Hb-DDAB-PME的检测限为5 nM,Mb-DDAB-PME的检测限为9 nM。Hb修饰的PME和Mb修饰的PME的线性响应范围分别为9 - 100和28 - 330 nM。对于使用Hb-DDAB-PME在-0.85 V处电化学检测NO,检测灵敏度为39.56 μA μM⁻¹ cm⁻²;检测限低至0.2 μM;线性响应范围为1.90 - 28.08 μM。

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