Zayhowski J J
Opt Lett. 1997 Feb 1;22(3):169-71. doi: 10.1364/ol.22.000169.
High-power passively Q-switched microchip lasers produce 157-muJ pulses of 1-ns duration in a single-frequency, diffraction-limited output beam. The unfocused 1.064-mum output of these devices has been used to drive periodically poled lithium niobate optical parametric amplifiers at wavelengths between 1.4 and 4.3 mum . With a peak conversion efficiency of nearly 100%, these devices generate 100-kW, subnanosecond pulses in the mid IR, with a beam quality that is better than two times diffraction limited.
高功率被动调Q微芯片激光器在单频、衍射极限输出光束中产生持续时间为1 ns、能量为157 μJ的脉冲。这些器件未聚焦的1.064 μm输出已被用于驱动周期极化铌酸锂光学参量放大器，产生波长在1.4至4.3 μm之间的光。这些器件峰值转换效率接近100%，在中红外波段产生100 kW、亚纳秒脉冲，光束质量优于两倍衍射极限。
