Index structure of fiber Bragg gratings in Ge-SiO(2) fibers.

The behavior of the concentration of photoinduced color centers in Ge-SiO(2) optical fibers was compared with that of the index modulation associated with fiber Bragg gratings (FBG's) written in the same fibers. We find that the fluence dependence of the photoinduced Ge E? center, its thermal annealing behavior, and its reaction with H(2) are similar to that of the index modulation generated in both H(2)-loaded and unloaded Ge-SiO(2) fibers. The much higher photosensitivity of H(2)-loaded Ge-SiO(2) fibers is attributed to the much higher formation efficiency of Ge E? centers, with an additional contribution from GeH. A diamagnetic structure, possibly densification, is also found to contribute to the index modulation of FBG's.