Kiowski Oliver, Arnold Katharina, Lebedkin Sergei, Hennrich Frank, Kappes Manfred M
Forschungszentrum Karlsruhe, Institut für Nanotechnologie, 76021 Karlsruhe, Germany and Universität Karlsruhe, Institut für Physikalische Chemie, 76128 Karlsruhe, Germany.
Phys Rev Lett. 2007 Dec 7;99(23):237402. doi: 10.1103/PhysRevLett.99.237402. Epub 2007 Dec 6.
Low-energy, dark excitonic states have recently been predicted to lie below the first bright (E11) exciton in semiconducting single-walled carbon nanotubes [Phys. Rev. Lett. 93, 157402 (2004)10.1103/PhysRevLett.93.157402]. Decay into such deep excitonic states is implicated as a mechanism which reduces photoluminescence quantum yields. In this study we report the first direct observation of deep excitons in SWNTs. Photoluminescence (PL) microscopy of suspended semiconducting single-walled carbon nanotubes (SWNTs) reveals weak emission satellites redshifted by approximately 38-45 and approximately 100-130 meV relative to the main E11 PL emission peaks. Similar satellites, redshifted by 95-145 meV depending on nanotube species, were also found in PL measurements of ensembles of SWNTs in water-surfactant dispersions. The relative intensities of these deep exciton emission features depend on the nanotube surroundings.
最近有预测表明,低能量的暗激子态位于半导体单壁碳纳米管中首个亮激子(E11)之下[《物理评论快报》93, 157402 (2004)10.1103/PhysRevLett.93.157402]。衰变为这种深激子态被认为是一种降低光致发光量子产率的机制。在本研究中,我们报告了在单壁碳纳米管中首次直接观测到深激子。悬浮的半导体单壁碳纳米管(SWNTs)的光致发光(PL)显微镜显示,相对于主要的E11 PL发射峰,有较弱的发射卫星峰发生了约38 - 45和约100 - 130毫电子伏特的红移。在水 - 表面活性剂分散体中的单壁碳纳米管集合体的PL测量中,也发现了类似的卫星峰,其红移量为95 - 145毫电子伏特,具体取决于纳米管种类。这些深激子发射特征的相对强度取决于纳米管的周围环境。