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单根碳纳米管 p-n 二极体的高效窄带光发射。

Efficient narrow-band light emission from a single carbon nanotube p-n diode.

机构信息

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.

出版信息

Nat Nanotechnol. 2010 Jan;5(1):27-31. doi: 10.1038/nnano.2009.319. Epub 2009 Nov 15.

Abstract

Electrically driven light emission from carbon nanotubes could be used in nanoscale lasers and single-photon sources, and has therefore been the focus of much research. However, high electric fields and currents have either been necessary for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. Furthermore, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1,000, and resulting in zero threshold current, negligible self-heating and high carrier-to-photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower ( approximately 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

摘要

碳纳米管的电致发光可以用于纳米级激光器和单光子源,因此一直是研究的重点。然而,为了实现电致发光,要么需要高电场和电流,要么需要高电场和电流作为不希望出现的副作用,这导致了对高功率和低效率的需求。此外,电致发光线宽宽到足以掩盖单个光学跃迁的贡献。在这里,我们报告了来自单个碳纳米管 p-n 二极管的电致发光。实现了对电载流子注入的新的控制水平,将功耗降低了 1000 倍以上,从而实现了零阈值电流、可忽略的自热和高载流子-光子转换效率。此外,电致发光光谱比以前的研究明显更窄(约 35 毫电子伏特),从而可以识别自由激子和局域激子的发射。

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