Moeller F, Enderlein J, Belkerdid M A, Malocha D C, Buff W
RF Monolithics, Dallas, TX.
IEEE Trans Ultrason Ferroelectr Freq Control. 1999;46(4):842-8. doi: 10.1109/58.775648.
This paper presents the design, fabrication, and experimental results for a differential phase shift keying (DPSK) single SAW-based correlator on GaAs for direct sequence spread spectrum applications. The DPSK modulation format allows for noncoherent data demodulation; the SAW device correlator acts as the despreader. Unlike the conventional technique of using two parallel correlators and a one data bit delay element, this new system uses two inline correlators. When implemented on SAW devices, this in-line structure has the advantage of an inherent one data bit delay, lower insertion loss, and less signal distortion than the parallel structure. The DPSK correlator is fabricated on a {100} cut GaAs substrate with SAW propagation in the 110 direction, Using this cut, which is widely used in electronics, Rayleigh waves are generated with a piezoelectric coupling coefficient of the same order as ST-cut quartz. The piezoelectric semiconductor GaAs is of great interest because it is the only substrate that can be used to integrate SAW devices directly with electronics on the same chip, resulting in smaller packaging, reduction of packaging parasitics, lower cost, and greater system integration. This paper presents experimental results for SAW in-line correlator structures on GaAs along with their despreading system performances. Experimental measurements in both the time and frequency domains were performed and were found to be in good agreement with theoretical predictions.
本文介绍了一种用于直接序列扩频应用的基于砷化镓(GaAs)的差分相移键控(DPSK)单声表面波(SAW)相关器的设计、制造及实验结果。DPSK调制格式允许进行非相干数据解调;SAW器件相关器用作解扩器。与使用两个并行相关器和一个一位数据延迟元件的传统技术不同,这种新系统使用两个串联相关器。当在SAW器件上实现时,这种串联结构具有固有的一位数据延迟、比并行结构更低的插入损耗和更少的信号失真等优点。DPSK相关器是在{100}切割的GaAs衬底上制造的,SAW在110方向传播,采用这种在电子学中广泛使用的切割方式,可产生瑞利波,其压电耦合系数与ST切割石英的压电耦合系数处于同一量级。压电半导体GaAs备受关注,因为它是唯一可用于在同一芯片上直接将SAW器件与电子器件集成的衬底,从而实现更小的封装、减少封装寄生效应、降低成本并实现更高的系统集成度。本文给出了基于GaAs的SAW串联相关器结构及其解扩系统性能的实验结果。进行了时域和频域的实验测量,结果与理论预测吻合良好。