Brundrett D L, Gaylord T K, Glytsis E N
Appl Opt. 1998 May 1;37(13):2534-41. doi: 10.1364/ao.37.002534.
A one-dimensional 280-nm period silicon grating designed to exhibitpolarization-dependent reflection or antireflection behavior at visiblewavelengths has been fabricated and tested. For normally incident575-nm light, this grating reflects less than 3% of the incidentradiation polarized perpendicular to the grating grooves andapproximately 23% of the orthogonal polarization. To demonstratethe grating's broadband characteristics, reflectance measurements arepresented over the free-space wavelength range 475 nm < lambda(0) < 800 nm, for angles of incidence in the range 0 degrees < theta < 40 degrees , for polarization parallel and perpendicular to thegrating grooves, and for planes of incidence parallel and perpendicularto the grooves. A description of the fabrication process is alsogiven.
一种一维280纳米周期的硅光栅已被制造并测试，该光栅旨在在可见光波长下表现出偏振相关的反射或抗反射行为。对于垂直入射的575纳米光，该光栅对垂直于光栅槽偏振的入射辐射的反射率小于3%，而对正交偏振的反射率约为23%。为了展示该光栅的宽带特性，给出了在自由空间波长范围475纳米 < λ(0) < 800纳米、入射角范围0度 < θ < 40度、偏振平行和垂直于光栅槽以及入射平面平行和垂直于槽的情况下的反射率测量结果。还给出了制造工艺的描述。
