脉冲激光沉积法制备的铁掺杂Ba0.6Sr0.4TiO3薄膜的介电和可调谐性能的改善
Improvement in dielectric and tunable properties of Fe-doped Ba0.6Sr0.4TiO3 thin films grown by pulsed-laser deposition.
作者信息
Gong Jia, Cheng Jinrong, Zhu Weicheng, Yu Shengwen, Wu Wenbiao, Meng Zhongyan
机构信息
Department of Material Science and Engineering, Shanghai University, P.R. China.
出版信息
IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2579-82. doi: 10.1109/TUFFC.2007.580.
Fe-doped Ba(0.6)Sr(0.4)TiO3 (BST) thin films were prepared on Pt/Si substrates by the pulsed-laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films also was reduced by the addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88% at 10(6) Hz, which is 1.7% for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
采用脉冲激光沉积法在Pt/Si衬底上制备了铁掺杂的Ba(0.6)Sr(0.4)TiO3（BST）薄膜。铁掺杂剂的浓度在0.1 mol%至1.0 mol%之间变化。我们的结果表明，一定量的铁掺杂剂可以降低BST薄膜的介电损耗，而不会导致可调性显著降低。添加铁掺杂剂也降低了BST薄膜的漏电流。掺杂0.3 mol%铁离子的BST薄膜在10(6) Hz时显示出0.88%的最小介电损耗，未掺杂的BST薄膜为1.7%。此外，0.3 mol%铁掺杂的BST薄膜显示出51的最大品质因数（FOM），表明其综合介电和可调性能得到了改善。
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