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无金属酞菁在对三联苯单层和双层薄膜上的弱外延生长。

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films.

作者信息

Yang Junliang, Wang Tong, Wang Haibo, Zhu Feng, Li Gao, Yan Donghang

机构信息

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China.

出版信息

J Phys Chem B. 2008 Mar 13;112(10):3132-7. doi: 10.1021/jp711161f. Epub 2008 Feb 19.

DOI:10.1021/jp711161f
PMID:18281981
Abstract

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively. The surface geometrical channels of p-6P substrate dominated the oriented nucleation and growth of H2Pc film. Consequently, the H2Pc film showed incommensurate and commensurate epitaxy on p-6P ultrathin films.

摘要

弱外延生长(WEG)能够制备出具有高迁移率的盘状有机半导体薄膜,其迁移率可达到相应单晶的水平。我们在生长于对六苯基(p-6P)超薄膜(单层和双层)上的无金属酞菁(H2Pc)模型体系中,研究了平面酞菁的WEG行为及机制。分子直立的高度取向H2Pc薄膜在p-6P单层和双层薄膜上分别呈现出两种不同的面内取向,即三组面内取向和仅一组面内取向。p-6P衬底的表面几何通道主导了H2Pc薄膜的取向成核和生长。因此,H2Pc薄膜在p-6P超薄膜上表现出非公度和共格外延。

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