Cho Jung Young, Capan Cigdem, Young D P, Chan Julia Y
Department of Chemistry, Louisiana State University, Baton Rouge, Louisiana 70803, USA.
Inorg Chem. 2008 Apr 7;47(7):2472-6. doi: 10.1021/ic7017192. Epub 2008 Mar 4.
Single crystals of SmCu4Ga8 have been grown using Ga flux and characterized by single-crystal X-ray diffraction. SmCu4Ga8, isostructural to SmZn11, crystallizes in the hexagonal P6/mmm (No. 191) space group, with Z = 3 and lattice parameters a = 8.865(2) A and c = 8.607(2) A. Magnetic susceptibility data show antiferromagnetic ordering at 3.3 K. Metallic behavior is observed in the temperature range 2-300 K. A large positive magnetoresistance (MR % = (rho H - rho 0)/rho 0 x 100) up to 40% is also observed near T N. In this paper, we present the structure and physical properties of SmCu4Ga8.
采用镓助熔剂法生长出了SmCu4Ga8单晶，并通过单晶X射线衍射对其进行了表征。SmCu4Ga8与SmZn11同构，结晶于六方P6/mmm（编号191）空间群，Z = 3，晶格参数a = 8.865(2) Å，c = 8.607(2) Å。磁化率数据表明在3.3 K时存在反铁磁有序。在2 - 300 K温度范围内观察到金属行为。在TN附近还观察到高达40%的大正磁阻（MR % = (ρH - ρ0)/ρ0 × 100）。在本文中，我们介绍了SmCu4Ga8的结构和物理性质。
