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有限半导体单壁碳纳米管的能隙、电子结构和X射线光谱学

Energy gaps, electronic structures, and x-ray spectroscopies of finite semiconductor single-walled carbon nanotubes.

作者信息

Gao Bin, Jiang Jun, Wu ZiYu, Luo Yi

机构信息

Department of Theoretical Chemistry, School of Biotechnology, Royal Institute of Technology, SE-10691 Stockholm, Sweden.

出版信息

J Chem Phys. 2008 Feb 28;128(8):084707. doi: 10.1063/1.2839294.

Abstract

We report hybrid density functional theory calculations for electronic structures of hydrogen-terminated finite single-walled carbon nanotubes (6,5) and (8,3) up to 100 nm in length. Gap states that are mainly arisen from the hydrogen-terminated edges have been found in (8,3) tubes, but their contributions to the density of states become invisible when the tube is longer than 10 nm. The electronic structures of (6,5) and (8,3) tubes are found to be converged around 20 nm. The calculated band-gap energies of 100 nm long nanotubes are in good agreement with experimental results. The valence band structures of (6,5), (8,3), as well as (5,5) tubes are also investigated by means of ultraviolet photoelectron spectra (UPS), x-ray emission spectroscopy (XES), and the resonant inelastic x-ray scattering (RIXS) spectra theoretically. The UPS, XES and RIXS spectra become converged already at 10 nm. The length-dependent oscillation behavior is found in the RIXS spectra of (5,5) tubes, indicating that the RIXS spectra may be used to determine the size and length of metallic nanotubes. Furthermore, the chiral dependence observed in the simulated RIXS spectra suggests that RIXS spectra could be a useful technique for the determination of chirality of carbon nanotubes.

摘要

我们报告了对长度达100纳米的氢终止有限单壁碳纳米管(6,5)和(8,3)的电子结构进行的杂化密度泛函理论计算。在(8,3)管中发现了主要源自氢终止边缘的能隙态,但当管长超过10纳米时,它们对态密度的贡献变得不可见。(6,5)和(8,3)管的电子结构在约20纳米处收敛。计算得到的100纳米长纳米管的带隙能量与实验结果吻合良好。还通过紫外光电子能谱(UPS)、x射线发射光谱(XES)以及理论上的共振非弹性x射线散射(RIXS)光谱研究了(6,5)、(8,3)以及(5,5)管的价带结构。UPS、XES和RIXS光谱在10纳米处就已收敛。在(5,5)管的RIXS光谱中发现了长度依赖的振荡行为,这表明RIXS光谱可用于确定金属纳米管的尺寸和长度。此外,在模拟的RIXS光谱中观察到的手性依赖性表明,RIXS光谱可能是确定碳纳米管手性的一种有用技术。

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