Chen H L, Wang L A
Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan.
Appl Opt. 1999 Aug 1;38(22):4885-90. doi: 10.1364/ao.38.004885.
We demonstrate a new bottom antireflective coating (BARC) layer for ArF excimer laser lithography. The antireflective layer is composed of hexamethyldisiloxane (HMDSO) film, which is deposited by the conventional electron cyclotron resonance-plasma-enhanced chemical-vapor deposition process. We obtain the appropriate HMDSO films for BARC layers by varying the gas-flow rate ratio of oxygen to HMDSO. Such a process has several advantages: high deposition rate, low process temperature, easy film removal, and reduced cost. Measured reflectances of less than 0.5% on both Al-Si and silicon crystal substrates have been achieved and agree well with the simulated reflectances. The swing effect is shown to be significantly reduced by addition of the HMDSO-based BARC layer.
我们展示了一种用于ArF准分子激光光刻的新型底部抗反射涂层（BARC）。该抗反射层由六甲基二硅氧烷（HMDSO）薄膜组成，通过传统的电子回旋共振等离子体增强化学气相沉积工艺沉积。我们通过改变氧气与HMDSO的气体流量比来获得适用于BARC层的HMDSO薄膜。这种工艺具有几个优点：沉积速率高、工艺温度低、薄膜易于去除且成本降低。在铝硅和硅晶体衬底上测得的反射率均小于0.5%，与模拟反射率吻合良好。结果表明，添加基于HMDSO的BARC层可显著降低摆动效应。
