Lu F, Wang F X, Li W, Zhang J H, Wang K M
Shandong University, Jinan 250100, China.
Appl Opt. 1999 Aug 20;38(24):5122-6. doi: 10.1364/ao.38.005122.
We formed planar waveguides in LiNbO(3) and LiTaO(3) crystals by megaelectron volt He-ion implantation. The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO(3) and LiTaO(3) waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO(3) planar waveguide has higher thermal stability than that in a LiNbO(3) waveguide. The experiments also show that annealing at a temperature higher than 400 degrees C results in recrystallization of the barrier.
我们通过兆电子伏特氦离子注入在铌酸锂（LiNbO₃）和钽酸锂（LiTaO₃）晶体中形成了平面波导。测量了两种波导的暗模，并根据参数化折射率分布重建方法描述了它们的折射率分布。两种离子注入波导的异常折射率呈现出截然不同的分布。我们通过在不同温度下退火来比较离子注入铌酸锂和钽酸锂波导中势垒的热稳定性。结果表明，钽酸锂平面波导中的势垒比铌酸锂波导中的势垒具有更高的热稳定性。实验还表明，在高于400摄氏度的温度下退火会导致势垒重结晶。
