Keller L D, Jaffe D T, Ershov O A, Benedict T, Graf U U
Center for Radiophysics and Space Science, Cornell University, Ithaca, New York 14853, USA.
Appl Opt. 2000 Mar 1;39(7):1094-105. doi: 10.1364/ao.39.001094.
We have fabricated large, coarsely ruled, echelle patterns on silicon wafers by using photolithography and chemical-etching techniques. The grating patterns consist of 142-microm-wide, V-shaped grooves with an opening angle of 70.6 degrees, blazed at 54.7 degrees. We present a detailed description of our grating-fabrication techniques and the results of extensive testing. We have measured peak diffraction efficiencies of 70% at lambda = 632.8 nm and conclude that the gratings produced by our method are of sufficient quality for use in high-resolution spectrographs in the visible and near IR (lambda approximately = 500-5000 nm).
我们通过光刻和化学蚀刻技术在硅片上制作了大型、粗刻痕的阶梯光栅图案。光栅图案由宽度为142微米、开口角度为70.6度、闪耀角为54.7度的V形槽组成。我们详细描述了光栅制作技术以及大量测试的结果。我们测量了在λ = 632.8纳米时的峰值衍射效率为70%,并得出结论,我们的方法所制作的光栅质量足以用于可见光和近红外(λ约为500 - 5000纳米)的高分辨率光谱仪。